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Effects of charge noise on a pulse-gated singlet-triplet S−T− qubit

机译:电荷噪声对脉冲门控单重态三重态TT量子位的影响

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摘要

We study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations is low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.
机译:我们研究了脉冲门控半导体双量子点量子位的动力学。在我们的实验中,量子位相干时间相对较长,但量子振荡的可见度较低。我们表明,这些观察结果与包含电荷噪声引起的退相干的理论相一致,电荷消噪引起了双点的失谐波动。因为在避免单重态-三重态的能级交叉点附近,来自电荷噪声的影响最大,所以当在操作过程中所穿越的电荷简并点附近发生单重态-三重态的能级交叉点时,振荡的可见性较低。在量子相积累的较大失谐值处失相。该理论与实验数据非常吻合,并预测通过适当调整点间隧穿速率可以大大提高可见度。

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